An optical fabrication scientist requested a quote for the following.
I would like to have either quartz or Si wafers coated with 150 to 300 nm GaP. GaP does not necessarily have to be crystalline. It can be amorphous but it has to be pure > 99%.
If in fact you could procure these wafers, I would be willing to buy a batch of 25 (either 4 inch or 6 inch).
It is possible to deposit at least a 100nm thick monocrystalline Epi layer of GaP on a Silicon wafer. Scientific literature reports that this has been done and suggests how to overcome the phase reversal domains (APD) that plague deposition of III-V semiconductors on IV substrates. Although there are many indications that his might be a very useful structure, no supplier that I know of does this on commercial basis.
We do have available facilities to grow a (150-300)nm thick Epi layer of undoped GaP on a 50.8mm or 76.2mm diameter Silicon wafer. However, we have never done this before, so we can only undertake it on "Best Effort" basis. In other words, you would have to pay for the Epi wafers, regardless of the morphology or uniformity of the Epi layer:
We quote:
Item Qty. Description
EX40g. 1 Epi wafers:
ubstrate: 3"Ø×380±25µm p-type Si:B[100-4ºtowards<111>]±0.5°, (5-50)Ohmcm, One-side-polished, back-side Alkaline etched, SEMI Flat (one) EPI Layer: undoped GaP:-, Nc<1E16/cc, 175±25nm thick, acked sealed in single wafer container.
We will be able to quote on a larger number of wafers only after we gain experience with the first three. I expect that, if we are successful, in larger quantities, like 25 wafers.
It is possible to deposit a (0.3 - 1.0)µm thick polycrystalline layer of GaP on a fused quartz substrate, by sputtering.
We have available facilities to deposit, by sputtering, 300nm thick layer of undoped GaP on a 76.2mm diameter fused quartz wafer. However, we have never done this before, so we can only undertake it on "Best Effort" basis. In other words, you would pay for the wafer, regardless of how well the GaP layer adheres to the substrates, how uniform is the thickness of the deposited layer and how smooth is the surface.
We quote:
Item Qty. Description
EX40h. 3 Thin film of polycrystalline undoped GaP Substrate: Fused quartz silica JGS2 wafers, P/P 3"Ø×500±25µm, Both-sides-polished, Ra<1nm rms, 1 Flat 16±2mm long. Thin Film Layer: Polycrystalline undoped GaP:-, 350±50nm thick, Packed in single wafer container, sealed in polyethylene foil.
We will be able to quote on a larger number of wafers only after we gain experience with the first three. I expect that, if we are successful, in larger quantities, like 25 wafers.
We can probably do above described deposition on 4"Ø fused quartz wafers. However, we can only expect a uniform layer of GaP over the inner 3"Ø. The largest GaP sputtering target that we have is 4"Ø.
We do have the facilities to make even a 6"Ø GaP target. That would let us produce a uniform layer of GaP over a 4"Ø area and a layer of decreasing thickness to about 75% of center point value at the periphery of a 6"Ø substrate. However we are not willing to make estimates of such wafer sizes until we have gained the experience with EX40h.
Reference #ONLQ11501 for pricing.
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III-V semiconductors are a class of compound semiconductors made from elements in group III (13) and group V (15) of the periodic table. They are widely used in high-speed electronics, optoelectronics, and RF (radio frequency) applications due to their superior electronic and optical properties compared to traditional silicon.
| Group III Element | Group V Element | Compound | Common Applications |
|---|---|---|---|
| Gallium (Ga) | Arsenic (As) | Gallium Arsenide (GaAs) | High-speed electronics, solar cells, LEDs |
| Indium (In) | Phosphorus (P) | Indium Phosphide (InP) | Fiber optic lasers, high-frequency RF devices |
| Aluminum (Al) | Gallium (Ga) | AlGaAs | Laser diodes, photodetectors |
| Gallium (Ga) | Nitrogen (N) | Gallium Nitride (GaN) | Power electronics, blue LEDs, radar |
| Indium (In) | Antimony (Sb) | Indium Antimonide (InSb) | Infrared detectors, Hall sensors |
Higher electron mobility → faster devices
Direct bandgap (for many III-Vs) → efficient light emission (great for lasers and LEDs)
Higher frequency response → better for RF and microwave circuits
Tunable bandgaps by varying composition (e.g., AlGaAs, InGaAs)
LEDs and Laser Diodes (e.g., GaN, GaAs, InP)
High-electron-mobility transistors (HEMTs) for 5G and satellite
Solar Cells (especially multi-junction cells)
Infrared and Terahertz Detectors
Quantum Dots and Qubits in emerging quantum computing research
Property |
Silicon (Si) |
Gallium Arsenide (GaAs) |
Indium Phosphide (InP) |
Gallium Nitride (GaN) |
Electron Mobility (cm²/V·s) |
1500 |
8500 |
5400 |
1000 |
Bandgap Type |
Indirect |
Direct |
Direct |
Direct |
Bandgap Energy (eV) |
1.12 |
1.43 |
1.34 |
3.4 |
Light Emission Efficiency |
Low |
High |
High |
Very High |
Max Operating Frequency (GHz) |
3 |
100 |
120 |
200 |
