A graduate student requested the following quote:
I am a graduate research assistant, and I am looking for price quotes on InSb and CdTe wafers for both (100) and (111) Ori. If you could give me a quote for 3" wafers, 2" wafers, and 1cm x 1cm (if available). We are not making devices with these wafers so it doesn"t matter if there is doping (cheapest substrate if fine for the price quotes).
Do you have the 2" InSb (111)-A wafer in stock?
UniversityWafer, Inc Quoted
em Qty. Description
DW99b. 5/10 Indium Antimonide wafers, P/E 2"Ø×500±25µm, n-type InSb:Te[111A]±0.5°,
One-side-polished, back-side matte etched, EJ Flats, Sealed under nitrogen in single wafer cassette.
Reference #197392 for specs and price.
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Indium Antimonide (InSb) Substrates are specialized compound semiconductor materials made from indium (In) and antimony (Sb). InSb is a III-V narrow bandgap semiconductor known for its exceptionally high electron mobility, low effective mass, and strong magnetoresistance. These properties make InSb ideal for a variety of high-performance electronic and optoelectronic applications.
Narrow bandgap (~0.17 eV at 300K)
Extremely high electron mobility (~77,000 cm²/V·s at 300K)
Low electron effective mass
Strong infrared absorption
High sensitivity to magnetic fields
InSb is widely used in mid-wave infrared (MWIR) detectors for thermal imaging and night vision.
Common in military, aerospace, and scientific instrumentation.
Effective for detecting wavelengths in the 3–5 μm range.
Due to strong magnetoresistive effects, InSb is used in Hall-effect sensors, magnetometers, and current sensors.
Beneficial in automotive, navigation, and industrial automation systems.
InSb’s extremely high electron mobility makes it suitable for high-frequency and high-speed transistors, such as heterojunction field-effect transistors (HFETs) and ballistic transport devices.
The low effective mass and large g-factor of InSb make it attractive for quantum computing and spintronic devices.
Used in research involving topological insulators and Majorana fermions.
InSb is responsive to THz radiation, which is useful in imaging systems, communications, and spectroscopy.
InSb substrates are typically grown using Vertical Gradient Freeze (VGF) or Bridgman methods.
Can be n-type or p-type, depending on dopants.
Available in various crystal orientations (e.g., <100>, <111>) and polished for epitaxial growth.
InSb is often used as a substrate for epitaxial growth of related III-V materials, such as:
InAs
GaSb
AlInSb
This makes it ideal for lattice-matched device fabrication in infrared and high-speed electronics.
University Wafer offers a range of InSb substrates tailored for research and development in IR, sensor, and quantum device applications. Options include:
Various diameters and thicknesses
Single- or double-side polished
Custom doping and orientation
Low-dislocation, epi-ready wafers
A Graduate Student studying Nuclear Engineering requested a quote for the following substrate:
I am a graduate student in Nuclear Engineering.
My advising professor is Professor told me
to contact University Wafer about
getting some materials. I am
researching the effects of
intense radiation on different
materials of varying ionization
energies. Lately I have only been
studying gases but would like to
start studying semiconductor
materials of varying band gaps. I
am interested in getting some
semiconductor materials but since
I am just going to bombard them
with radiation, I was wondering
if you had an like scrap material
from the dicing or like broken
wafers. I dont want to spend over
$100 per wafer its just going to
get destroyed after about a
minute of radiation. Can you let
me know if you have any material
such as this? I would be needing
pieces about 1cm in length or
larger of course, preferably the
same in width, and thickness
should not matter as I am
studying surface defects for now.
It would also be ideal to have a
variety of materials:
with some
undoped, some doped n, some doped
p. But I also know that beggars
cant be choosers and at this
point I will take anything I can
get. Let me know if you can help
and dont hesitate to call for
questions.
Reference #213033 for specs and pricing.
A scientist from a large solid state physics lab requested quote.
We are interested in buying
InSb substrates from you.
Premium quality of the
substrates is of crucial
interest for our research
activities.
Please inform us if you can
provide us with:
Material: InSb
Grade: Prime
Ori: (100)
Size: 2"
Thickness: 0.500 mm
Polishing: 2 sides epi pol.
We would kindly like to know
what is the price for 3 pieces
of the InSb substrates with
these specifications.
University Wafer Quoted:
Item Qty. Description
EH50. 10/15 Indium Antimonide wafers, P/P 2"Ø×450±25µm,
LEC p-type InSb:Ge[100]±0.5°, Ro=0.734 Ohmcm,
Nc > 1.35E15/cc, u=6,300cm²/Vs, EPD<200/cm²,
Both-sides-polished,
Sealed under nitrogen in single wafer cassette.
EH50b. 3/10/15 Indium Antimonide wafers, P/P 2"Ø×500±25µm,
LEC p-type InSb:Ge[100]±0.5°, Ro=0.734 Ohmcm,
Nc > 1.35E15/cc, u=6,300cm²/Vs, EPD<200/cm²,
Both-sides-polished,
Sealed under nitrogen in single wafer cassette.
Regarding item #C564, you can order 1 or 2 or 3 wafers at the indicated price per wafer. This item is in stock, for immediate shipment.
Regarding items #EH50 and EH50b, these items still have to be made. In both cases, the minimum order quantity is 3 wafers for 520.00 per wafer.
For Item #C564 we have the "Certificate of Conformance", but all parameters thereon are as stated in above description of #C564, and in addition, diameter is 50.8±0.04mm, thickness is 500±25µm, EPD<300/cm². Note that Nc and Mobility, are as measured at liquid nitrogen temperature of 77ºK. It is the nature of InSb that at room temperature its thermal charge carriers can swamp the dopant induced charge carriers.
Items #EH50 and EH50b still have to be made and the Certifcate will not be available until they are done. The quality of InSb is defined by its purity, that is Nc, by the perfection of the crystal, that is EPD. The quality of the wafer is defined by the precision of its crystallographic Ori {±0.5º}, diameter tolerance {±0.5mm} and thickness tolerance {±25µm}. The quality of the wafer polish is defined by Surface roughness, TTV and surface cleanliness. Wafers EH50 and EH50b are Epi-read which means that the surface roughness, TTV and cleanliness is adequate for the growth of Epi layers, a process that also brings out into visibility any polishing defects. "Epi-Ready" means a perfect wafer.
Let us know what you would like to do.