Tetraethyl Orthosilicate (TEOS)

university wafer substrates

Depositing Tetraethyl Orthosilicate by CVD

A materials scientist requested a quote for the following.

I was wondering if you may provide the service I am in need of. I’d like a quote for depositing tetraethyl orthosilicate by CVD onto an 8” device wafer from 200oC to ambient conditions. I’m looking forward to your response.

We are interested in depositing silanes (preferably TEOS) onto a wafer. We need the deposition to be done at or below 200oC and we can try a variety of deposition treatments if need be.

UniversityWafer, Inc. Quoted:

We have 8” Wafer with 2000 Angstrom of PETEOS layer on it if that works.

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TEOS in Semiconductors

TEOS, or tetraethyl orthosilicate, is a chemical compound widely used in the semiconductor industry, particularly in the process of creating silicon dioxide (SiO2) layers on substrates. Its chemical formula is Si(OC2H5)4, and it is a liquid precursor for depositing high-purity silicon dioxide films via chemical vapor deposition (CVD) processes.

Importance of TEOS in Semiconductors

  • Silicon Dioxide Formation:
    • Silicon dioxide is a critical material in semiconductor devices, serving as an insulator, a gate dielectric in MOSFETs, and a passivation layer.
    • TEOS is a key precursor for depositing these SiO2 layers because it decomposes at high temperatures to form pure SiO2.
  • Process Compatibility:
    • TEOS-based deposition works well in plasma-enhanced chemical vapor deposition (PECVD) and low-pressure chemical vapor deposition (LPCVD) processes.
    • It enables deposition at relatively low temperatures, making it compatible with devices that cannot tolerate high thermal budgets.
  • Uniformity and Conformality:
    • TEOS-based CVD processes produce films with excellent step coverage and uniformity, essential for modern devices with complex geometries.
  • High Purity:
    • TEOS produces SiO2 with high chemical and structural purity, which is essential for minimizing defects and ensuring device reliability.
  • Applications in Nanotechnology:
    • TEOS is often used to grow SiO2 films for advanced micro- and nanofabrication, including biosensors, MEMS devices, and photonic structures.
  • Etch Stop and Masking Layer:
    • SiO2 deposited from TEOS acts as an effective etch stop or masking layer in various etching processes.

Key Considerations

  • Deposition Parameters: Deposition using TEOS involves careful control of temperature, pressure, and gas flow to achieve desired film properties.
  • Environmental and Safety Factors: TEOS is flammable and can hydrolyze in the presence of water to produce ethanol, so proper handling and storage are essential.

In summary, TEOS is a cornerstone material in the semiconductor industry, offering a reliable and versatile method to produce high-quality SiO2 layers critical for device fabrication. Its role in enabling precise and controlled deposition processes makes it indispensable for advanced semiconductor technologies.