100mm P/B (100) 1-10 ohm-cm SSP 500um Prime Grade Si Wafers 

100mm P-type boron doped silicon wafers with <100> crystal orientation, 1-10 ohm-cm resistivity, 500µm thickness, and prime grade quality are widely used for photolithography, CMOS fabrication, MEMS devices, microfluidics, thin-film deposition, sensor development, and semiconductor research. UniversityWafer supplies high-quality 4-inch silicon wafers with SSP and DSP options, tight TTV specifications, and custom wafer configurations for both research and production applications.

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100mm P-Type Boron Doped Prime Grade Silicon Wafers

UniversityWafer, Inc. supplies 100mm P-type boron doped silicon wafers with <100> crystal orientation, single-side polished (SSP) surfaces, 1-10 ohm-cm resistivity, and prime grade quality. These semiconductor substrates are widely used for photolithography, CMOS fabrication, MEMS development, microfluidics, sensor manufacturing, thin-film deposition, and university research.

Prime grade silicon wafers are manufactured to strict semiconductor industry standards and provide superior surface quality, low particle counts, excellent flatness, and tight dimensional tolerances. Compared to test grade wafers, prime substrates offer improved process consistency and are preferred for advanced device fabrication and production environments.

Our 100mm prime grade silicon wafers are available with standard and custom specifications, including different crystal orientations, resistivity ranges, polishing options, oxide coatings, nitride coatings, and epitaxial layers.

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Why Choose Prime Grade Silicon Wafers?

Prime grade silicon wafers are the highest quality commercially available silicon substrates. These wafers are manufactured with stringent controls on total thickness variation (TTV), bow, warp, particle contamination, and surface roughness. The result is a substrate suitable for demanding semiconductor manufacturing processes where precision and repeatability are critical.

Researchers and manufacturers often select prime grade wafers when developing integrated circuits, MEMS devices, photonic components, biosensors, and advanced packaging technologies. The superior surface quality improves photolithography performance, thin-film uniformity, and device yield.

Applications for 100mm P-Type Silicon Wafers

100mm (4-inch) silicon wafers continue to be one of the most widely used substrate formats in research laboratories and semiconductor development facilities. Their compatibility with standard cleanroom equipment makes them ideal for process development and prototyping.

Common applications include:

  • CMOS device fabrication
  • MEMS sensors and actuators
  • Microfluidic device manufacturing
  • Photolithography process development
  • Wafer bonding research
  • Thin-film deposition studies
  • Solar cell research
  • Biosensor development
  • Semiconductor reliability testing
  • University and government laboratory research

The P-type boron doping used in these wafers provides stable electrical characteristics suitable for a wide range of semiconductor and microelectronic applications. The <100> crystal orientation is particularly popular because it offers excellent compatibility with thermal oxidation, anisotropic etching, and integrated circuit fabrication processes.

100mm Silicon Wafers for Research and Production

Whether you are developing MEMS devices, microfluidic chips, CMOS sensors, or advanced semiconductor structures, 100mm prime grade silicon wafers provide the quality and consistency required for successful fabrication. UniversityWafer supplies wafers in small quantities for research as well as larger volumes for production and pilot-line manufacturing.

Custom wafer specifications are available, including DSP wafers, thin wafers, thermal oxide coated wafers, LPCVD silicon nitride wafers, epitaxial silicon wafers, and silicon-on-insulator (SOI) substrates.

100mm P-Type Boron Doped <100> Silicon Wafers for Semiconductor Research

UniversityWafer, Inc. supplies high-quality 100mm P-type boron doped silicon wafers with <100> crystal orientation, resistivities ranging from 1-10 ohm-cm, and prime grade surface quality for semiconductor research and production applications. These wafers are commonly selected for photolithography, MEMS fabrication, CMOS development, microfluidics, wafer bonding, sensor fabrication, and thin-film deposition processes.

Prime grade silicon wafers provide superior surface quality, tighter dimensional tolerances, lower particle counts, and improved total thickness variation (TTV) compared to test grade wafers. These characteristics help ensure consistent device performance and higher process yields in advanced semiconductor manufacturing environments.

The <100> crystal orientation is one of the most widely used substrate orientations because it offers excellent compatibility with anisotropic etching, thermal oxidation, photolithography, and integrated circuit fabrication processes. Boron-doped P-type silicon is frequently utilized in CMOS devices, MEMS sensors, photovoltaic research, and microelectronic device development.

Available 100mm P-Type Silicon Wafer Inventory

The inventory below represents a sample of our available 100mm (4-inch) P-type boron doped silicon wafers. Additional specifications, orientations, coatings, thicknesses, and resistivity ranges are available upon request.

Item # Dopant Orientation Diameter Thickness Polish Resistivity Key Features
E326 P/Boron <100> 100mm 525µm SSP 5-10 Ω-cm 1 Flat, TTV <4µm, Bow <15µm, Warp <30µm
6640 P/Boron <100> 100mm 525µm SSP 5-10 Ω-cm 2 Flats, TTV <5µm
6313 P/Boron <100> 100mm 525µm SSP 4.1-4.5 Ω-cm No Flats
G189 P/Boron <100> 100mm 475µm SSP 1-10 Ω-cm Epi Edges for 150µm Epitaxial Growth
4959 P/Boron <100> 100mm 525µm DSP 5-10 Ω-cm 150nm LPCVD Stoichiometric SiN on Both Sides
D959 P/Boron <100> 100mm 525µm DSP 1-10 Ω-cm 150nm LPCVD Si₃N₄ over 200nm SiO₂
6402 P/Boron <100> 100mm 525µm DSP 1-3 Ω-cm 2 Flats, TTV <5µm
TS059 P/Boron <100> 100mm 475µm SSP 1-2 Ω-cm Oxygen 10-18ppma, Carbon <1ppma
6939 P/Boron <100> 100mm 525µm DSP 1-3 Ω-cm 2 Flats, TTV <5µm
6927 P/Boron <100> 100mm 525µm SSP 1-10 Ω-cm 2 Flats
16F P/Boron <100> 6° 100mm 525µm SSP 4-6 Ω-cm Miscut Orientation
16C1 P/Boron <100> 100mm 500µm DSP 1-10 Ω-cm 2 Flats

Why Choose Prime Grade Silicon Wafers?

Prime grade silicon wafers are manufactured to stringent semiconductor industry standards and are designed for applications requiring exceptional surface quality and dimensional control. Compared to test grade substrates, prime wafers typically offer lower particle counts, tighter flatness specifications, reduced bow and warp, and improved thickness uniformity.

Researchers and production engineers frequently select prime grade wafers for:

  • Integrated circuit fabrication
  • CMOS device development
  • Photolithography processes
  • MEMS fabrication
  • Microfluidic device manufacturing
  • Wafer bonding applications
  • Thin-film deposition
  • Semiconductor process development
  • Sensor fabrication
  • University and government research projects

Applications for 100mm P-Type Silicon Wafers

100mm silicon wafers remain one of the most popular substrate sizes used in university laboratories, government research facilities, and semiconductor development programs. Their manageable size and broad equipment compatibility make them ideal for both prototyping and production-scale process development.

Common applications include:

  • MEMS pressure sensors
  • Accelerometers and gyroscopes
  • Microfluidic chips
  • Biosensors
  • Photovoltaic devices
  • Power semiconductor research
  • Wafer-level packaging
  • Silicon photonics
  • Thin-film characterization
  • Semiconductor reliability testing

The 1-10 ohm-cm resistivity range offers a versatile electrical profile suitable for many device architectures while maintaining compatibility with standard semiconductor processing techniques.

Custom Silicon Wafer Options Available

In addition to standard prime grade wafers, UniversityWafer can supply custom silicon substrates with specific resistivities, crystal orientations, thicknesses, edge profiles, polishing configurations, and deposited thin films. Available options include thermal oxide, LPCVD silicon nitride, epitaxial silicon, SOI wafers, DSP substrates, and custom thin silicon wafers.

Whether you need a single wafer for proof-of-concept research or volume quantities for production, our engineering team can help identify the best substrate specification for your application.

Related Silicon Wafer Resources

Need a specification not shown in the inventory table? Contact UniversityWafer for current stock availability, custom wafer configurations, and volume pricing.