Aluminum Gallium Nitride (AlGaN) 

Aluminum Gallium Nitride (AlGaN) wafers and AlGaN/GaN heterostructures are widely used in UV LEDs, laser diodes, HEMTs, RF electronics, and wide-bandgap semiconductor research. UniversityWafer supplies AlGaN on sapphire templates and custom epitaxial structures for optoelectronic devices, high-power transistors, and deep-ultraviolet applications.

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AlGaN on Sapphire Wafers for Lamps, Lasers and LEDs

Aluminum Gallium Nitride (AlGaN) is a wide-bandgap semiconductor material widely used for UV LEDs, laser diodes, high-power electronics, photodetectors, and deep ultraviolet light sources. AlGaN epitaxial layers grown on sapphire substrates offer excellent thermal stability, optical properties, and compatibility with GaN device fabrication.

Typical Request for AlGaN Epitaxial Wafers

A senior consulting scientist requested AlGaN-coated sapphire wafers for lamp, laser and LED research.

AlGaN Epi on Sapphire Specifications

UniversityWafer, Inc. quoted:

  • Item: DA18
  • Substrate: C-plane sapphire
  • Diameter: 50.8 ± 0.3 mm
  • Thickness: 430 ± 25 µm
  • Primary Flat Orientation: C-plane ±0.2°
  • Surface Finish: Double-side epi-ready polished
  • Surface Roughness: Ra < 0.3 nm (AFM)
  • Epitaxial Layer: Undoped Al0.3GaN
  • Epitaxial Thickness: 1 µm

Reference #164039 for pricing and specifications.

Applications of AlGaN Wafers

AlGaN templates and AlGaN/GaN heterostructures are commonly used in:

  • Deep ultraviolet LEDs
  • Laser diodes
  • UV photodetectors
  • High electron mobility transistors (HEMTs)
  • High-frequency RF devices
  • Wide-bandgap semiconductor research
  • Optoelectronic devices
  • Solar-blind sensors

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Undoped C-Plane AlGaN Templates

Undoped c-plane AlGaN templates are frequently used for epitaxial growth studies, UV emitters, and semiconductor device characterization. Low defect densities and smooth surfaces are critical for maximizing optical and electrical performance.

A graduate student requested:

2-inch diameter undoped c-plane AlGaN templates with approximately 50% aluminum composition. Required information included:

  • Dislocation density
  • Surface roughness
  • Substrate miscut
  • Surface polish specifications
  • Single-side polished wafers preferred

Reference #194822 for pricing and specifications.

Why AlGaN is Important for Wide-Bandgap Electronics

AlGaN alloys possess large bandgaps, high breakdown fields, and excellent thermal stability, making them ideal for next-generation electronic and optoelectronic devices. Their ability to emit ultraviolet light and support high-power operation makes AlGaN one of the most important materials for advanced semiconductor technologies.

AlGaN/GaN Heterostructures on Sapphire, SiC and Silicon

AlGaN devices including LEDs, laser diodes and HEMT transistor structures Aluminum Gallium Nitride (AlGaN) and AlGaN/GaN heterostructures are widely used in high-frequency electronics, UV LEDs, laser diodes, HFETs, HEMTs and GaN-based transistor research. These epitaxial layers are commonly grown by MOVPE on sapphire, silicon carbide or high-resistivity silicon substrates.

Substrates for GaN-Based Transistors

A PhD candidate requested wafers for transferring HFET technology based on AlGaN/GaN heterostructures deposited on Al₂O₃ sapphire.

  • Al₂O₃ sapphire: 2 inch SSP, 375–400 µm thick
  • 4H-SiC: 2 inch, 375–400 µm thick, semi-insulating for transistor manufacturing
  • Silicon (111): 2 inch, 375–400 µm thick, high-resistivity for transistor applications

The customer required a semi-insulating substrate to reduce unwanted electrical influence during high-field and high-frequency transistor operation.

Reference #171068 for specifications and pricing.

P-Type AlGaN and GaN Templates

P-type AlGaN templates and p-type GaN templates are used in optoelectronic devices, UV emitters, laser diodes, LEDs and advanced semiconductor research. Magnesium-doped GaN and AlGaN layers can be deposited on sapphire or quartz substrates depending on the application requirements.

A postdoctoral researcher requested p-type GaN and p-type AlGaN templates with detailed electrical, optical, mechanical and surface data. Desired film thickness was approximately 0.3–0.8 µm on sapphire or quartz, with substrate stability above 1000°C.

Reference #197858 for specifications and pricing.

Research-Grade AlGaN Templates on C-Plane Sapphire

Research-grade AlGaN templates are available with different aluminum compositions, dopants, buffer layers and epitaxial thicknesses. These wafers are useful for studying carrier transport, optical emission, high electron mobility transistors and wide-bandgap semiconductor devices.

A sales engineer requested 2 inch AlGaN templates on c-plane sapphire with 200–300 nm AlGaN layers doped with silicon at 3–5 × 1018 cm-3. Target aluminum compositions were 20% and 40%.

UniversityWafer, Inc. quoted the following research-grade options:

Substrate Diameter Buffer Layer Epitaxial Layer / Dopant Thickness
Sapphire 2 inch 50 nm AlN GaN, intrinsic 100 nm
Sapphire 2 inch 50 nm AlN GaN, intrinsic 300 nm
Sapphire 2 inch 50 nm AlN Al10%GaN, intrinsic 300 nm
Sapphire 2 inch 50 nm AlN Al20%GaN, n-type / Si doped 250 nm
Sapphire 2 inch 50 nm AlN Al40%GaN, n-type / Si doped 250 nm

Reference #102784 for specifications and pricing.

Applications of AlGaN/GaN Templates

  • High electron mobility transistors (HEMTs)
  • Heterostructure field-effect transistors (HFETs)
  • UV LEDs and deep-UV emitters
  • Laser diodes
  • Wide-bandgap semiconductor devices
  • High-power RF electronics
  • GaN-based transistor research
  • MOVPE and epitaxial growth studies

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