Bonded SOI Wafers for Research and Device Fabrication
Bonded Silicon-on-Insulator (SOI) wafers are used in MEMS, RF MEMS, BioMEMS, MOSFET fabrication, optoelectronics, smart power devices, sensors, and advanced analog IC research. These wafers include a silicon device layer, a buried oxide layer, and a silicon handle wafer, allowing researchers to fabricate devices with excellent electrical isolation and precise layer control.
Researchers use bonded SOI substrates for applications such as pressure sensors, accelerometers, gyroscopes, photonic devices, microfluidics, RF components, and p-type silicon solar cell fabrication.
Common SOI Wafer Applications
- MEMS and MST devices
- RF MEMS switches and resonators
- BioMEMS and microfluidic devices
- MOSFET and CMOS research
- Optoelectronic devices
- Smart power devices
- Advanced analog integrated circuits
- Pressure sensors and accelerometers
- Silicon photonics
- Luxury watch components
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Silicon-on-Sapphire vs SOI Wafers
Silicon-on-Sapphire (SoS) is another substrate option for specialized semiconductor applications. While bonded SOI wafers are commonly used to reduce short-channel effects and improve electrical isolation in microelectronic devices, SoS substrates are often selected for high-performance RF and radiation-sensitive applications.
SiSi Bonded SOI Wafers
SiSi bonded SOI wafers can be used as an alternative to epitaxial films on silicon. These wafers may offer lower cost and strong performance for fabricating fast PIN diodes, sensors, MEMS structures, and advanced semiconductor devices.
Bonded Silicon-on-Insulator (SOI) Wafers
Bonded Silicon-on-Insulator (SOI) wafers are widely used in MEMS, RF MEMS, photonics, BioMEMS, pressure sensors, accelerometers, power devices, and advanced integrated circuits. SOI substrates consist of a silicon device layer separated from a silicon handle wafer by a buried oxide (BOX) layer.
UniversityWafer maintains one of the largest inventories of bonded SOI wafers available to researchers and engineers. Device layer thicknesses range from less than 1 µm to more than 500 µm, with numerous buried oxide thicknesses, resistivities, and wafer diameters available from stock.
Our inventory includes both N-type and P-type bonded SOI wafers in 100 mm, 125 mm, 150 mm, and larger diameters. Custom SOI specifications are also available for MEMS fabrication, photonic devices, sensors, RF components, and semiconductor process development.
Contact us with your required device layer thickness, buried oxide thickness, handle wafer specification, orientation, and resistivity for a fast quotation.
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Sample Bonded SOI Wafer Inventory
| Diameter | Handle Thickness (µm) | BOX Thickness (Å) | Device Layer (µm) | Device Resistivity | Type |
|---|---|---|---|---|---|
| 100mm | 514 | 0 | 11 | 2500–5500 Ω-cm | N/N |
| 100mm | 505 | 0 | 20 | 2500–5500 Ω-cm | N/N |
| 100mm | 480 | 0 | 45 | 2500–5500 Ω-cm | N/N |
| 100mm | 440 | 0 | 85 | 2800–5200 Ω-cm | N/N |
| 100mm | 637 | 0 | 125 | 2800–5200 Ω-cm | N/N |
| 100mm | 400 | 0 | 175 | >5000 Ω-cm | N/N |
| 100mm | 475 | 0 | 525 | >5000 Ω-cm | N/N |
| 125mm | 550 | 10,000 | 20 | 1–30 Ω-cm | P/P |
| 150mm | 380 | 6,000 | 15 | 0.05–0.1 Ω-cm | N/P |
| 150mm | 573 | 20,000 | 50 | 14.4–17.6 Ω-cm | N/N |
Need a different SOI specification? We stock hundreds of bonded SOI wafer configurations with custom device layer thicknesses, buried oxide thicknesses, resistivities, wafer diameters, and doping types. Contact us for current inventory and pricing.
Common Applications of Bonded SOI Wafers
Bonded silicon-on-insulator wafers are used in a wide variety of semiconductor and MEMS applications because of their excellent electrical isolation and reduced parasitic capacitance. The buried oxide layer improves device performance while allowing precise control of the silicon device layer thickness.
- MEMS pressure sensors
- Accelerometers and gyroscopes
- RF MEMS switches and resonators
- Silicon photonics
- BioMEMS and microfluidics
- Power electronics
- Smart power devices
- Advanced analog ICs
- MOSFET fabrication
- Optoelectronic devices
Advantages of Bonded SOI Wafers
Compared with bulk silicon wafers, bonded SOI substrates offer lower parasitic capacitance, improved isolation, reduced leakage currents, and better performance at high frequencies. These advantages make SOI wafers attractive for MEMS, RF, photonics, and next-generation semiconductor devices.
- Excellent electrical isolation
- Reduced power consumption
- Improved switching speed
- High-frequency performance
- Superior radiation hardness
- Precise device layer thickness control
- Excellent MEMS fabrication properties