Mohs Hardness of Semiconductor Substrates
What Is The Mohs Hardness of Semiconductor Substrates?
Here's a list of common semiconductor substrates along with their Mohs hardness values. These values give an idea of how scratch-resistant each material is, which can be important in handling, dicing, polishing, or designing for wear resistance.
Mohs Hardness of Common Semiconductor Substrates
| Material | Mohs Hardness | Notes |
|---|---|---|
| Silicon (Si) | ~6.5–7 | Most widely used semiconductor substrate |
| Germanium (Ge) | ~6.0 | Softer than silicon; often used in infrared optics and detectors |
| Gallium Arsenide (GaAs) | ~5.5 | Brittle; used in high-frequency and optoelectronics |
| Gallium Nitride (GaN) | ~8.5 | Very hard; used in LEDs, power devices |
| Silicon Carbide (SiC) | ~9.5 | Extremely hard; used in high-power and high-temperature devices |
| Sapphire (Al₂O₃) | 9 | Used as a substrate for GaN LEDs; very scratch resistant |
| Quartz (SiO₂, crystalline) | ~7 | Used in optical and RF applications |
| Amorphous SiO₂ (Glass) | ~5.5–6.5 | Fused silica or thermal oxide; used as insulating layers |
| Indium Phosphide (InP) | ~5 | Used in high-speed and photonic applications |
| Zinc Oxide (ZnO) | ~4.5 | Used in piezoelectric and optoelectronic devices |
| Diamond | 10 | Used as a heat spreader or high-power semiconductor substrate |
⚠️ Notes:
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Mohs hardness is qualitative, not linear or exact.
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Some materials are anisotropic, meaning hardness may vary slightly with crystal orientation (e.g., SiC or sapphire).
Mohs vs. Vickers Hardness of Semiconductor Substrates
Comparing Mohs hardness to Vickers hardness (HV), which is a more quantitative and precise measurement of hardness, especially useful for engineers and material scientists.
| Material | Mohs Hardness | Vickers Hardness (HV) | Notes |
|---|---|---|---|
| Silicon (Si) | ~6.5–7 | ~1150 HV | Standard semiconductor substrate |
| Germanium (Ge) | ~6.0 | ~780 HV | Softer than Si; IR and detectors |
| Gallium Arsenide (GaAs) | ~5.5 | ~750 HV | Brittle, optoelectronics |
| Gallium Nitride (GaN) | ~8.5 | ~1650 HV | LED and power electronics |
| Silicon Carbide (SiC) | ~9.5 | ~2800–3100 HV | Very hard, high-temp devices |
| Sapphire (Al₂O₃) | 9 | ~2000–2200 HV | LED substrate, very durable |
| Quartz (SiO₂, crystalline) | ~7 | ~1100 HV | Used in RF and optics |
| Amorphous SiO₂ (Fused silica) | ~5.5–6.5 | ~500–600 HV | Used as insulation or mask |
| Indium Phosphide (InP) | ~5 | ~600–700 HV | High-speed electronics |
| Zinc Oxide (ZnO) | ~4.5 | ~400–500 HV | Piezoelectric and transparent |
| Diamond | 10 | ~10,000 HV+ | Hardest material known |