100mm & 150mm Silicon Carbide (SiC) Wafer Sale 

UniversityWafer, Inc. offers 100mm and 150mm silicon carbide (SiC) wafers for sale in mechanical, test, production, and epitaxial grades. Available in 4H-SiC and 6H-SiC polytypes, these substrates are used for power electronics, Schottky diodes, MOSFETs, RF devices, EV inverters, and wide bandgap semiconductor research. Our low-defect, high-purity SiC wafers are available in diameters ranging from 2 inches to 150mm for research, prototyping, and high-volume manufacturing applications.

UW Logo

100mm and 150mm Silicon Carbide Wafers for Sale

UniversityWafer, Inc. supplies 100mm and 150mm silicon carbide wafers for power electronics, EV inverters, RF devices, Schottky diodes, MOSFET fabrication, equipment testing, and semiconductor research. Available SiC materials include 4H-SiC and 6H-SiC substrates in mechanical, test, production, and epi-ready grades.

These SiC wafers are designed for researchers and manufacturers who need high crystal quality, low defect density, controlled resistivity, and reliable wafer geometry. Silicon carbide is widely used for next-generation power devices because it supports high voltage, high temperature, and high-frequency performance.

Current Silicon Carbide Wafer Specials

  • 100mm SiC test and mechanical grade wafers
  • 100mm SiC production grade wafers
  • 150mm SiC mechanical grade wafers
  • 150mm SiC test grade wafers
  • 100mm and 150mm SiC epitaxial wafers
  • Silicon carbide ingots

SiC Wafer Inventory

Wafer Description Approx. Qty Typical Application
100mm Test / Mechanical ~2,000 Equipment tuning, experiments, and non-device applications.
100mm Production ~7,000 650V to 1700V diode fabrication. Epi available, add $30 per µm, minimum 12 wafers.
150mm Mechanical ~500 Equipment setup, process development, experiments, and non-device applications.
150mm Test ~700 Mechanical grade with improved wafer shape, including bow and warp control.

Need a custom SiC substrate? Send us your required diameter, polytype, dopant, resistivity, thickness, polish, off-axis orientation, grade, and quantity.

Get Your Silicon Carbide Wafer Quote FAST!
or Buy SiC Wafers Online and Start Researching Today!





Silicon Carbide (SiC) Wafer Grades for Power Device Fabrication

Silicon carbide wafer grading helps researchers and device manufacturers choose the right SiC substrate for power electronics, Schottky diodes, MOSFETs, JFETs, IGBTs, RF devices, and high-voltage semiconductor applications. Different grades balance crystal quality, defect density, wafer cost, and device performance.

Higher-grade SiC wafers may offer tighter tolerances for micropipe density (MPD), threading screw dislocation (TSD), basal plane dislocation (BPD), resistivity, bow, warp, and surface quality. These specifications are important for improving device yield and reducing manufacturing costs.

SiC Grade Strengths Typical Applications
Prime Standard Balanced performance and cost with controlled micropipe density for low-to-medium current devices. Schottky diodes and junction barrier Schottky devices.
Prime Select More stringent MPD and TSD tolerances for improved device reliability and mid-range current ratings. PIN diodes, switches, and power devices.
Prime Ultra Very low MPD, TSD, and BPD tolerances with tighter wafer resistivity control for high-current devices. High-current MOSFETs, JFETs, IGBTs, BJTs, and large-area PIN diodes.

100mm and 150mm Silicon Carbide Wafers for Sale

UniversityWafer, Inc. offers 100mm and 150mm silicon carbide wafers for research, prototyping, production testing, equipment tuning, and power device fabrication. Available SiC options may include mechanical grade, test grade, production grade, epi-ready wafers, and 4H-SiC n-type substrates.

100mm 4H-SiC n+ Production and Test Wafers

The 4H-1440 n+ silicon carbide wafer is a 100mm, 4° off-axis SiC substrate used for device research, diode fabrication, equipment testing, and power semiconductor development.

100mm 4H n plus silicon carbide wafer for power semiconductor research

150mm 4H-SiC n+ Wafers, 4° Off-Axis

The 4H-1460 n+ silicon carbide wafer is a 150mm, 4° off-axis SiC substrate designed for larger-diameter silicon carbide research and production applications. These 6-inch SiC wafers are used for power electronics, MOSFETs, Schottky diodes, RF devices, and high-temperature semiconductor applications.

150mm 4 degree off axis 4H n plus silicon carbide wafer for MOSFETs and power devices

Choosing the Right SiC Wafer Grade

The best SiC wafer grade depends on your device type, voltage rating, current rating, defect tolerance, and budget. Mechanical grade wafers are useful for equipment setup and experiments, while production grade and prime grade SiC wafers are better suited for device fabrication and yield-sensitive semiconductor manufacturing.

Related Pages